发明授权
- 专利标题: Silicon nitride sintered material and production process thereof
- 专利标题(中): 氮化硅烧结材料及其制造方法
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申请号: US10024015申请日: 2001-12-21
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公开(公告)号: US06849207B2公开(公告)日: 2005-02-01
- 发明人: Kouji Funaki , Katsura Matsubara , Hiroki Watanabe , Masaya Ito
- 申请人: Kouji Funaki , Katsura Matsubara , Hiroki Watanabe , Masaya Ito
- 申请人地址: JP Aichi
- 专利权人: NGK Spark Plug Co., Ltd.
- 当前专利权人: NGK Spark Plug Co., Ltd.
- 当前专利权人地址: JP Aichi
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2000-402257 20001228
- 主分类号: C04B35/584
- IPC分类号: C04B35/584 ; C04B35/626 ; H01B1/04 ; C04B35/565 ; F23Q7/22
摘要:
A silicon nitride sintered material containing a silicon nitride component and silicon carbide having an average particle size of 1 μm or less in an amount of at least 1 mass % and less than 4 mass %, based on 100 mass % of the silicon nitride component. The carbide is dispersed in the silicon nitride component, and the silicon nitride sintered material has a thermal expansion coefficient of at least 3.7 ppm/° C. between room temperature and 1,000° C. The silicon nitride component contains a rare earth element in an amount of 15-25 mass % as reduced to a certain oxide thereof and Cr in an amount of 5-10 mass % as reduced to a certain oxide thereof, and a crystalline phase is present in intergrain regions of the sintered material.
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