发明授权
US06851939B2 System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
失效
使用电子回旋共振在环境温度下进行化学气相沉积的系统和使用其沉积金属复合膜的方法
- 专利标题: System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
- 专利标题(中): 使用电子回旋共振在环境温度下进行化学气相沉积的系统和使用其沉积金属复合膜的方法
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申请号: US10124057申请日: 2002-04-17
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公开(公告)号: US06851939B2公开(公告)日: 2005-02-08
- 发明人: Joong-Kee Lee , Dal-Keun Park , Byung-Won Cho , Joo-Man Woo , Bup-Ju Jeon
- 申请人: Joong-Kee Lee , Dal-Keun Park , Byung-Won Cho , Joo-Man Woo , Bup-Ju Jeon
- 申请人地址: KR Seoul
- 专利权人: Korea Institute of Science and Technology
- 当前专利权人: Korea Institute of Science and Technology
- 当前专利权人地址: KR Seoul
- 代理机构: Scully, Scott, Murphy & Presser
- 优先权: KR2001-21711 20010423
- 主分类号: B01J3/00
- IPC分类号: B01J3/00 ; B01J19/08 ; C23C14/34 ; C23C16/44 ; C23C16/511 ; H01J37/32 ; H01L21/285 ; H05H1/46 ; C23C16/00
摘要:
A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.
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