发明授权
- 专利标题： Electronic device substrate structure and electronic device
- 专利标题（中）： 电子器件基板结构和电子器件
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申请号： US10650764申请日： 2003-08-29
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公开(公告)号： US06855996B2公开(公告)日： 2005-02-15
- 发明人: Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
- 申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-254790 20020830
- 主分类号： C30B29/68
- IPC分类号： C30B29/68 ; H01L21/20 ; H01L21/285 ; H01L21/3205 ; H01L21/365 ; H01L29/04 ; H01L41/08 ; H01L41/09 ; H01L41/18 ; H01L41/22 ; H01L41/29 ; H01L41/316 ; H01L41/319 ; H01L41/39 ; H03H3/02 ; H03H9/17 ; H01S3/19
摘要：
An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.
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