发明授权
- 专利标题： Integrating n-type and p-type metal gate transistors
- 专利标题（中）： 集成n型和p型金属栅晶体管
-
申请号： US10327293申请日： 2002-12-20
-
公开(公告)号： US06858483B2公开(公告)日： 2005-02-22
- 发明人: Mark Doczy , Justin K. Brask , Steven J. Keating , Chris E. Barns , Brian S. Doyle , Michael L. McSwiney , Jack T. Kavalieros , John P. Barnak
- 申请人： Mark Doczy , Justin K. Brask , Steven J. Keating , Chris E. Barns , Brian S. Doyle , Michael L. McSwiney , Jack T. Kavalieros , John P. Barnak
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Erik M. Metzger
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/336 ; H01L21/8238 ; H01L29/49 ; H01L29/78
摘要：
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
公开/授权文献
- US20040121541A1 Integrating n-type and p-type metal gate transistors 公开/授权日：2004-06-24
信息查询
IPC分类:
