Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus

Invention Grant

US06858529B2 Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus 有权

Title translation: 形成接触塞的方法，包括掺杂有比磷更小的扩散系数的杂质的多晶硅

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Patent Title: Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
Patent Title (中): 形成接触塞的方法，包括掺杂有比磷更小的扩散系数的杂质的多晶硅
Application No.: US10440777

Application Date: 2003-05-19
Publication No.: US06858529B2

Publication Date: 2005-02-22
Inventor: Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
Applicant: Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
Applicant Address: KR Kyungki-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Kyungki-do
Agency: Myers Bigel Sibley & Sajovec
Priority: KR10-2002-0036487 20020627
Main IPC: H01L21/28
IPC: H01L21/28 ; H01L21/225 ; H01L21/285 ; H01L21/768 ; H01L23/485 ; H01L21/4763

Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus

Abstract:

Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.

Abstract(Chinese):

形成半导体器件可以包括在包括其导电区域的半导体衬底上形成绝缘层，其中绝缘层具有暴露导电区域的一部分的接触孔。可以在接触孔中形成多晶硅接触插塞，其中多晶硅接触插塞的至少一部分掺杂有具有小于磷（P）的扩散系数的扩散系数的元件。还讨论了相关结构。

Public/Granted literature

US20040000693A1 Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus and related structures Public/Granted day:2004-01-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的