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1.发明授权Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus 有权形成接触塞的方法，包括掺杂有比磷更小的扩散系数的杂质的多晶硅公开(公告)号：US06858529B2
公开(公告)日：2005-02-22
申请号：US10440777
申请日：2003-05-19
Applicant: Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
Inventor： Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
IPC: H01L21/28 , H01L21/225 , H01L21/285 , H01L21/768 , H01L23/485 , H01L21/4763
CPC classification number: H01L21/76877 , H01L21/2257 , H01L21/28525 , H01L23/485 , H01L2924/0002 , H01L2924/00
Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Abstract translation: 形成半导体器件可以包括在包括其导电区域的半导体衬底上形成绝缘层，其中绝缘层具有暴露导电区域的一部分的接触孔。 可以在接触孔中形成多晶硅接触插塞，其中多晶硅接触插塞的至少一部分掺杂有具有小于磷（P）的扩散系数的扩散系数的元件。 还讨论了相关结构。
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2.发明授权Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus 有权具有接触插塞的半导体器件包括掺杂有比磷少的扩散系数的杂质的多晶硅公开(公告)号：US07176533B2
公开(公告)日：2007-02-13
申请号：US10982113
申请日：2004-11-04
Applicant: Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
Inventor： Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
IPC: H01L29/76
CPC classification number: H01L21/76877 , H01L21/2257 , H01L21/28525 , H01L23/485 , H01L2924/0002 , H01L2924/00
Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Abstract translation: 形成半导体器件可以包括在包括其导电区域的半导体衬底上形成绝缘层，其中绝缘层具有暴露导电区域的一部分的接触孔。 可以在接触孔中形成多晶硅接触插塞，其中多晶硅接触插塞的至少一部分掺杂有具有小于磷（P）的扩散系数的扩散系数的元件。 还讨论了相关结构。
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3.发明申请公开(公告)号：US20050095857A1
公开(公告)日：2005-05-05
申请号：US10982113
申请日：2004-11-04
Applicant: Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
Inventor： Eun-Ae Chung , Myoung-Bum Lee , Young-Pil Kim , Jin-Gyun Kim , Bean-Jun Jin
IPC: H01L21/28 , H01L21/225 , H01L21/285 , H01L21/768 , H01L23/485 , H01L21/3205 , H01L21/44 , H01L21/4763
CPC classification number: H01L21/76877 , H01L21/2257 , H01L21/28525 , H01L23/485 , H01L2924/0002 , H01L2924/00
Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Abstract translation: 形成半导体器件可以包括在包括其导电区域的半导体衬底上形成绝缘层，其中绝缘层具有暴露导电区域的一部分的接触孔。 可以在接触孔中形成多晶硅接触插塞，其中多晶硅接触插塞的至少一部分掺杂有具有小于磷（P）的扩散系数的扩散系数的元件。 还讨论了相关结构。
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