发明授权
- 专利标题： Nitride semiconductor, method for manufacturing the same and nitride semiconductor device
- 专利标题（中）： 氮化物半导体，其制造方法和氮化物半导体器件
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申请号： US10352256申请日： 2003-01-28
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公开(公告)号： US06858877B2公开(公告)日： 2005-02-22
- 发明人: Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
- 申请人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2001-178081 20010613
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00 ; H01S5/343
摘要：
A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
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