公开(公告)号：US06858877B2

公开(公告)日：2005-02-22

申请号：US10352256

申请日：2003-01-28

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/34333

摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

摘要翻译： 在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。 在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。 结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。 例如，可以通过晶体生长获得没有产生裂纹的激光结构。

公开(公告)号：US06764871B2

公开(公告)日：2004-07-20

申请号：US10465647

申请日：2003-06-20

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

IPC分类号： H01L2100

CPC分类号： H01L31/0304 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate (101) at a first temperature; subjecting the low-temperature deposited layer to heat treatment at a second temperature, which is higher than the first temperature, and converting the low-temperature deposited layer into a faceted layer (102); initially growing a GaN based semiconductor layer (103) onto a surface of the faceted layer at a third temperature; and fully growing the GaN based semiconductor layer at a fourth temperature that is lower than the third temperature. By employing the method for fabricating a nitride semiconductor device according to the present invention, it is possible to provide a nitride semiconductor device with high quality and high reliability.

摘要翻译： 一种用于制造氮化物半导体器件的方法，包括以下步骤：在第一温度下将至少包含至少Al的III-V族氮化物半导体组成的低温沉积层形成在衬底（101）的表面上; 使所述低温沉积层在比所述第一温度高的第二温度下进行热处理，并将所述低温沉积层转化为刻面层（102）; 最初在第三温度下将GaN基半导体层（103）生长到所述刻面层的表面上; 以及在低于第三温度的第四温度下完全生长GaN基半导体层。 通过采用本发明的氮化物半导体器件的制造方法，可以提供高品质，高可靠性的氮化物半导体器件。

公开(公告)号：US06586774B2

公开(公告)日：2003-07-01

申请号：US10021006

申请日：2001-12-19

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US07160748B2

公开(公告)日：2007-01-09

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US20050142682A1

公开(公告)日：2005-06-30

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US06921678B2

公开(公告)日：2005-07-26

申请号：US10434063

申请日：2003-05-09

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/223

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06611005B2

公开(公告)日：2003-08-26

申请号：US09796702

申请日：2001-03-02

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2912

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法，在依靠金属有机气相外延技术在反应室内设置的基座上保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06265287B1

公开(公告)日：2001-07-24

申请号：US09179935

申请日：1998-10-28

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法根据金属有机气相外延技术，在设置在反应室中的基座保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06720586B1

公开(公告)日：2004-04-13

申请号：US09712127

申请日：2000-11-15

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w ≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z <= 1和x + y + z = 1，通过使用对应于 从掩模膜暴露的凸起的顶面。