发明授权
- 专利标题： Semiconductor apparatus and protection circuit
- 专利标题（中）： 半导体装置及保护电路
-
申请号： US10400410申请日： 2003-03-28
-
公开(公告)号： US06858885B2公开(公告)日： 2005-02-22
- 发明人: Atsushi Ebara
- 申请人： Atsushi Ebara
- 申请人地址： JP Tokyo
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Dickstein Shapiro Morin & Oshinsky LLP
- 优先权： JP2002-090231 20020328
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/768 ; H01L21/822 ; H01L21/8238 ; H01L27/02 ; H01L27/04 ; H01L27/06 ; H01L27/092 ; H01L29/74 ; H01L31/111
摘要：
A protection circuit for use in a semiconductor apparatus includes a first conductivity type semiconductor substrate, a second conductivity type first diffusion region formed on the semiconductor substrate, and a second conductivity type second diffusion region formed on the semiconductor substrate. The second diffusion region is distanced at a prescribed interval from the first diffusion region. The first diffusion region is electrically connected to a pad for electrically connecting the semiconductor apparatus to an outside region. The second diffusion region is electrically connected to a power supply voltage. At least a portion of each of the first and second diffusion regions is entirely formed right under a pad area having the pad.
公开/授权文献
- US20030223164A1 Semiconductor apparatus and protection circuit 公开/授权日：2003-12-04
信息查询
IPC分类:
