发明授权
US06861275B2 Method for producing group III nitride compound semiconductor device
失效
制备III族氮化物化合物半导体器件的方法
- 专利标题: Method for producing group III nitride compound semiconductor device
- 专利标题(中): 制备III族氮化物化合物半导体器件的方法
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申请号: US10413384申请日: 2003-04-15
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公开(公告)号: US06861275B2公开(公告)日: 2005-03-01
- 发明人: Toshiaki Chiyo
- 申请人: Toshiaki Chiyo
- 申请人地址: JP Aichi
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi
- 代理机构: McGinn & Gibb, PLLC
- 优先权: JPP2002-113058 20020416
- 主分类号: H01L33/32
- IPC分类号: H01L33/32 ; H01L33/42 ; H01L21/00
摘要:
A method of producing a Group III nitride compound semiconductor device, has the following steps of: forming an n-type layer on a substrate; forming a layer containing a light emitting layer on the n-type layer; forming a p-type layer being doped with a p-type impurity on the layer; etching at least a portion of the n-type layer and at least a portion of the layer to reveal at least a part of the n-type layer and an end surface of the layer; forming a p-electrode on a surface side of the p-type layer; forming an n-electrode on the revealed part of the n-type layer; irradiating the p-type layer with an electron beam to make resistance of the p-type layer low; and acidizing at least the revealed end surface of the layer after the electron beam irradiating step.