Invention Grant
- Patent Title: Method of disposing conductive bumps onto a semiconductor device
- Patent Title (中): 将导电凸块设置在半导体器件上的方法
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Application No.: US09736795Application Date: 2000-12-14
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Publication No.: US06861345B2Publication Date: 2005-03-01
- Inventor: Michael B. Ball , Chad A. Cobbley
- Applicant: Michael B. Ball , Chad A. Cobbley
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H05K3/00 ; H05K3/28 ; H05K3/34 ; H01L21/44
Abstract:
A method of forming conductive structures on the contact pads of a substrate,such as a semiconductor die or a printed circuit board. A solder mask is secured to an active surface of the substrate. Apertures through the solder mask are aligned with contact pads on the substrate. The apertures may be preformed or formed after a layer of the material of which the solder mask is comprised has been disposed on the substrate. Conductive material is disposed in and shaped by the apertures of the solder mask to form conductive structures in communication with the contact pads exposed to the apertures. Sides of the conductive structures are exposed through the solder mask, either by removing the solder mask from the substrate or by reducing the thickness of the solder mask. The present invention also includes semiconductor devices formed during different stages of the method of the present invention.
Public/Granted literature
- US20010002044A1 Method of disposing conductive bumps onto a semiconductor device and semiconductor devices so formed Public/Granted day:2001-05-31
Information query
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