发明授权
US06861356B2 Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
失效
形成阻挡膜的方法和形成具有阻挡膜的半导体器件的布线结构和电极的方法
- 专利标题： Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
- 专利标题（中）： 形成阻挡膜的方法和形成具有阻挡膜的半导体器件的布线结构和电极的方法
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申请号： US10225228申请日： 2002-08-22
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公开(公告)号： US06861356B2公开(公告)日： 2005-03-01
- 发明人: Kimihiro Matsuse , Hayashi Otsuki
- 申请人： Kimihiro Matsuse , Hayashi Otsuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP9-319059 19971105; JP10-207198 19980707
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L29/49 ; H01L21/44
摘要：
There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.