发明授权
- 专利标题： High-frequency semiconductor device
- 专利标题（中）： 高频半导体器件
-
申请号： US10204446申请日： 2001-05-11
-
公开(公告)号： US06861906B2公开(公告)日： 2005-03-01
- 发明人: Kazutomi Mori , Shintaro Shinjo , Kousei Maemura , Teruyuki Shimura , Kazuhiko Nakahara , Tadashi Takagi
- 申请人： Kazutomi Mori , Shintaro Shinjo , Kousei Maemura , Teruyuki Shimura , Kazuhiko Nakahara , Tadashi Takagi
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-002476 20010110
- 国际申请： PCTJP01/03953 WO 20010511
- 国际公布： WO0205646 WO 20020718
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H03F3/19 ; H03F3/21 ; H03F3/68
摘要：
A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
公开/授权文献
- US20030011435A1 High-frequency semiconductor device 公开/授权日：2003-01-16
信息查询
IPC分类:
