Invention Grant
- Patent Title: Sputtering apparatus and sputter film deposition method
- Patent Title (中): 溅射装置和溅射膜沉积方法
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Application No.: US10635816Application Date: 2003-08-07
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Publication No.: US06863785B2Publication Date: 2005-03-08
- Inventor: Eiji Shidoji , Eiichi Ando , Tomohiro Yamada , Takahiro Mashimo
- Applicant: Eiji Shidoji , Eiichi Ando , Tomohiro Yamada , Takahiro Mashimo
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2001-031004 20010207; JP2001-220942 20010723; JP2001-383069 20011217
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/50 ; C23C14/54 ; C23C14/56 ; G02B1/10 ; H01J37/34

Abstract:
A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.
Public/Granted literature
- US20040026240A1 Sputtering apparatus and sputter film deposition method Public/Granted day:2004-02-12
Information query
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