发明授权
US06864152B1 Fabrication of trenches with multiple depths on the same substrate
有权
在同一基板上制作具有多个深度的沟槽
- 专利标题： Fabrication of trenches with multiple depths on the same substrate
- 专利标题（中）： 在同一基板上制作具有多个深度的沟槽
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申请号： US10442533申请日： 2003-05-20
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公开(公告)号： US06864152B1公开(公告)日： 2005-03-08
- 发明人: Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
- 申请人： Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
- 申请人地址： US CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Beyer Weaver & Thomas, LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.
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