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公开(公告)号：US07189628B1
公开(公告)日：2007-03-13
申请号：US10931605
申请日：2004-08-31
申请人： Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
发明人： Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
IPC分类号： H01L21/461
CPC分类号： H01L21/76232 , H01L21/76229 , H01L21/76283
摘要： Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.
摘要翻译： 通过形成具有对应于浅沟槽和深沟槽的最终深度的差的深度的初始沟槽，在同一晶片上实现双沟槽深度。 第二个掩模用于打开初步沟槽上的深沟槽的区域，并在另外的位置打开浅沟槽。 浅沟和深沟的蚀刻然后同时进行。
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公开(公告)号：US06864152B1
公开(公告)日：2005-03-08
申请号：US10442533
申请日：2003-05-20
申请人： Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
发明人： Mohammad R. Mirbedini , Venkatesh P. Gopinath , Hong Lin , Verne Hornback , Dodd Defibaugh , Ynhi Le
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76232 , H01L21/76229 , H01L21/76283
摘要： Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.
摘要翻译： 通过形成具有对应于浅沟槽和深沟槽的最终深度的差的深度的初始沟槽，在同一晶片上实现双沟槽深度。 第二个掩模用于打开初步沟槽上的深沟槽的区域，并在另外的位置打开浅沟槽。 浅沟和深沟的蚀刻然后同时进行。
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公开(公告)号：US20060127823A1
公开(公告)日：2006-06-15
申请号：US11011823
申请日：2004-12-14
申请人： David Sturtevant , Phong Do , Dodd Defibaugh
发明人： David Sturtevant , Phong Do , Dodd Defibaugh
IPC分类号： G03F7/20
CPC分类号： G03F7/70283
摘要： A method and file structure for exposing images from a plurality of reticles onto a wafer. Multiple images are effectively merged into the same file, which means the wafer need not be unloaded from a stage while exposing multiple reticles. For example, every odd numbered column can contain images from one reticle, and every even numbered column can contain images from a second reticle, where image shifts are used to align the patterns exactly. A continuous pattern is utilized to mimic normal wafer processing.
摘要翻译： 一种用于将图像从多个掩模版曝光到晶片上的方法和文件结构。 多个图像被有效地合并到相同的文件中，这意味着在暴露多个掩模版时，晶片不需要从载物台卸载。 例如，每个奇数列可以包含来自一个掩模版的图像，并且每个偶数列可以包含来自第二掩模版的图像，其中使用图像移位来精确对准图案。 利用连续图案来模拟正常的晶片处理。
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公开(公告)号：US20060188793A1
公开(公告)日：2006-08-24
申请号：US11381409
申请日：2006-05-03
申请人： Kunal Taravade , Dodd Defibaugh
发明人： Kunal Taravade , Dodd Defibaugh
摘要： A phase shift mask having transmission properties that are dependent at least in part on an intensity of an incident light beam. The phase shift mask has a mask substrate that is substantially transparent to the incident light beam. A first phase shift layer is disposed on the mask substrate. The first phase shift layer has a refractive index that is nonlinear with the intensity of the incident light beam. The refractive index of the first phase shift layer changes with the intensity of the incident light beam on the phase shift mask. By using a first phase shift layer on the phase shift mask that has a refractive index that is non linear with the intensity of the incident light beam, properties of a light beam transmitted through the first phase shift layer, such as interference patterns in the transmitted light beam, can be adjusted by adjusting the intensity of the incident light beam. Thus, in this manner there is provided an additional tool by which the exposure patterns produced by the phase shift mask can be adjusted. In other words, the transmission properties of the phase shift mask are adjustable with the intensity of the incident light beam.
摘要翻译： 具有至少部分地依赖于入射光束的强度的透射特性的相移掩模。 相移掩模具有对入射光束基本透明的掩模基板。 第一相移层设置在掩模基板上。 第一相移层具有与入射光束的强度非线性的折射率。 第一相移层的折射率随入射光束在相移掩模上的强度而变化。 通过在相移掩模上使用具有与入射光束的强度非线性的折射率的第一相移层，透过第一相移层的光束的特性，例如透射的干涉图案 光束可以通过调整入射光束的强度来调节。 因此，以这种方式，提供了可以调整由相移掩模产生的曝光图案的附加工具。 换句话说，相移掩模的透射特性可以随入射光束的强度而调节。
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公开(公告)号：US20050112478A1
公开(公告)日：2005-05-26
申请号：US10972898
申请日：2004-10-25
申请人： Kunal Taravade , Dodd Defibaugh
发明人： Kunal Taravade , Dodd Defibaugh
摘要： A phase shift mask having transmission properties that are dependent at least in part on an intensity of an incident light beam. The phase shift mask has a mask substrate that is substantially transparent to the incident light beam. A first phase shift layer is disposed on the mask substrate. The first phase shift layer has a refractive index that is nonlinear with the intensity of the incident light beam. The refractive index of the first phase shift layer changes with the intensity of the incident light beam on the phase shift mask. By using a first phase shift layer on the phase shift mask that has a refractive index that is non linear with the intensity of the incident light beam, properties of a light beam transmitted through the first phase shift layer, such as interference patterns in the transmitted light beam, can be adjusted by adjusting the intensity of the incident light beam. Thus, in this manner there is provided an additional tool by which the exposure patterns produced by the phase shift mask can be adjusted. In other words, the transmission properties of the phase shift mask are adjustable with the intensity of the incident light beam.
摘要翻译： 具有至少部分地依赖于入射光束的强度的透射特性的相移掩模。 相移掩模具有对入射光束基本透明的掩模基板。 第一相移层设置在掩模基板上。 第一相移层具有与入射光束的强度非线性的折射率。 第一相移层的折射率随入射光束在相移掩模上的强度而变化。 通过在相移掩模上使用具有与入射光束的强度非线性的折射率的第一相移层，透过第一相移层的光束的特性，例如透射的干涉图案 光束可以通过调整入射光束的强度来调节。 因此，以这种方式，提供了可以调整由相移掩模产生的曝光图案的附加工具。 换句话说，相移掩模的透射特性可以随入射光束的强度而调节。
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