发明授权
- 专利标题： Power semiconductor device and manufacturing method thereof
- 专利标题（中）： 功率半导体器件及其制造方法
-
申请号： US09961248申请日： 2001-09-25
-
公开(公告)号： US06867454B2公开(公告)日： 2005-03-15
- 发明人: Hidetaka Hattori
- 申请人： Hidetaka Hattori
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2000-294316 20000927
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A power semiconductor device includes a base layer of first conductivity. A base layer of second conductivity is selectively formed on one surface of the base layer of first conductivity. An emitter layer or source layer of first conductivity is selectively formed on the surface of the base layer of second conductivity. A collector layer or drain layer is selectively formed on the other surface of the base layer of first conductivity or selectively formed on the one surface thereof. A gate electrode is formed on first and second gate insulating films which are formed on part of the base layer of second conductivity which lies between the emitter layer or source layer of first conductivity and the base layer of first conductivity. The capacitance of a capacitor formed of the second gate insulating film is different from that of a capacitor formed of the first gate insulating film.
公开/授权文献
信息查询
IPC分类:
