发明授权
- 专利标题: Process for atomic layer deposition of metal films
- 专利标题(中): 金属膜原子层沉积工艺
-
申请号: US10324781申请日: 2002-12-20
-
公开(公告)号: US06869876B2公开(公告)日: 2005-03-22
- 发明人: John Anthony Thomas Norman , David Allen Roberts , Melanie Anne Boze
- 申请人: John Anthony Thomas Norman , David Allen Roberts , Melanie Anne Boze
- 申请人地址: US PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号: C23C16/14
- IPC分类号: C23C16/14 ; C23C10/60 ; C23C16/08 ; C23C16/18 ; C23C16/30 ; C23C16/56 ; C23C26/00 ; H01L21/285 ; H01L21/768 ; H01L21/44
摘要:
In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.
公开/授权文献
- US20040087143A1 Process for atomic layer deposition of metal films 公开/授权日:2004-05-06