发明授权
- 专利标题: Silicon nitride porous body and method of manufacturing the same
- 专利标题(中): 氮化硅多孔体及其制造方法
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申请号: US10311980申请日: 2002-06-25
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公开(公告)号: US06869902B2公开(公告)日: 2005-03-22
- 发明人: Katsuhiro Inoue , Kenji Morimoto , Masaaki Masuda , Shinji Kawasaki , Hiroaki Sakai
- 申请人: Katsuhiro Inoue , Kenji Morimoto , Masaaki Masuda , Shinji Kawasaki , Hiroaki Sakai
- 申请人地址: JP
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP
- 代理机构: Parkhurst & Wendel, L.L.P.
- 优先权: JP2001-087911 20010326
- 国际申请: PCTJP02/02826 WO 20020625
- 国际公布: WO0207690 WO 20021003
- 主分类号: B01D39/20
- IPC分类号: B01D39/20 ; B01D53/22 ; B01D53/86 ; B01D71/02 ; B01J27/24 ; B01J32/00 ; B01J35/00 ; B01J35/04 ; B01J35/10 ; C04B35/584 ; C04B35/591 ; C04B38/00 ; F01N3/28
摘要:
A silicon nitride porous body (5) obtained by nitriding a molded body having metallic silicon (3) as a main component, the porous body having a porous structure with an average pore diameter of 3 μm or above, and wherein the total content of silicon and nitrogen is 95% or above and the nitridation ratio of silicon is 90% or above. The silicon nitride porous body has a porous structure with a large average pore diameter, with a test specimen cut out from the porous body exhibiting large thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.