发明授权
- 专利标题： Integrated circuit structure with improved LDMOS design
- 专利标题（中）： 具有改进的LDMOS设计的集成电路结构
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申请号： US10315517申请日： 2002-12-10
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公开(公告)号： US06870218B2公开(公告)日： 2005-03-22
- 发明人: Jun Cai
- 申请人： Jun Cai
- 申请人地址： US ME South Portland
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US ME South Portland
- 代理商 Thomas R. Fitzgerald, Esq.; Laurence S. Roach, Esq.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/45 ; H01L29/49 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A semiconductor integrated circuit including an LDMOS device structure includes a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region.
公开/授权文献
- US20040108548A1 Integrated circuit structure with improved LDMOS design 公开/授权日：2004-06-10
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