发明授权
- 专利标题： Power switching transistor with low drain to gate capacitance
- 专利标题（中）： 功率开关晶体管具有低漏极到栅极电容
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申请号： US10313225申请日： 2002-12-09
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公开(公告)号： US06870221B2公开(公告)日： 2005-03-22
- 发明人: Prasad Venkatraman
- 申请人： Prasad Venkatraman
- 申请人地址： US AZ Phoenix
- 专利权人： Semiconductor Components Industries, LLC
- 当前专利权人： Semiconductor Components Industries, LLC
- 当前专利权人地址： US AZ Phoenix
- 代理商 James J. Stipanuk
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/76 ; H01L29/94
摘要：
A transistor (10) is formed on a semiconductor substrate (12) with a first surface (19) for forming a channel (40). A gate dielectric (22) has a first thickness overlying a first portion of the channel, and a dielectric film (20) overlies a second portion of the channel and has a second thickness greater than the first thickness. The second thickness reduces the drain to gate capacitance of the transistor, thereby improving its switching speed and frequency response.
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