发明授权
- 专利标题： Thin GaAs die with copper back-metal structure
- 专利标题（中）： 具有铜背金属结构的薄GaAs模具
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申请号： US10306834申请日： 2002-11-27
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公开(公告)号： US06870243B2公开(公告)日： 2005-03-22
- 发明人: Alexander James Elliott , Jeffrey Dale Crowder , Monte Gene Miller
- 申请人： Alexander James Elliott , Jeffrey Dale Crowder , Monte Gene Miller
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Toler, Larson & Abel, LLP
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F13/00 ; G11C5/00 ; H01L23/433 ; H01L23/482 ; H01L29/06 ; H01L29/40 ; H01L23/48 ; H01L23/495 ; H01L27/095
摘要：
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
公开/授权文献
- US20040099932A1 Thin GaAs die with copper back-metal structure 公开/授权日：2004-05-27