发明授权
- 专利标题： Atomic layer deposition method
- 专利标题（中）： 原子层沉积法
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申请号： US10645169申请日： 2003-08-19
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公开(公告)号： US06872421B2公开(公告)日： 2005-03-29
- 发明人: Chul-Ju Hwang , Kyung-Sik Shim
- 申请人： Chul-Ju Hwang , Kyung-Sik Shim
- 申请人地址： KR Kyonggi-do
- 专利权人： Jusung Engineering Co., Ltd
- 当前专利权人： Jusung Engineering Co., Ltd
- 当前专利权人地址： KR Kyonggi-do
- 代理机构： Seyfarth Shaw LLP
- 代理商 Timothy J Keefer
- 优先权： KR2000-46216 20000809
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/44 ; C23C16/455 ; C23C16/00
摘要：
An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.
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