公开(公告)号：US06634314B2

公开(公告)日：2003-10-21

申请号：US09927004

申请日：2001-08-08

申请人： Chul-Ju Hwang ,  Kyung-Sik Shim

发明人： Chul-Ju Hwang ,  Kyung-Sik Shim

IPC分类号： C23C1600

CPC分类号： C23C16/45551 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/45589

摘要： The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate. In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a remaining vapor substance out of the reaction chamber.

摘要翻译： 本发明公开了一种ALD方法，其包括：将多个基板分别装载到多个反应池中，所述多个反应池设置在与外部条件隔离的反应室内; 交替地且重复地将各种蒸汽物质施加到每个基板上，使得在每个基板上形成薄膜，其中每个喷射一种蒸汽物质的多个蒸气喷射管周期性地扫描每个基板，以交替地和重复地将各种蒸气物质施加到 在另一方面，本发明公开了一种半导体器件制造装置，包括：多个基座，其上分别安装相同数量的基板; 反应室将多个基座上的所有基板与外部条件隔离; 多个蒸气喷射管，设置在所述基板上，每个蒸气喷射管相对于所述基板相对旋转并周期性地将蒸气物质施加到每个基板上; 多个排气部分，每个排放部分设置在相应的基座附近，以将剩余的蒸汽物质排出反应室。

公开(公告)号：US06872421B2

公开(公告)日：2005-03-29

申请号：US10645169

申请日：2003-08-19

申请人： Chul-Ju Hwang ,  Kyung-Sik Shim

发明人： Chul-Ju Hwang ,  Kyung-Sik Shim

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/45589

摘要： An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

摘要翻译： 一种用于进行原子层沉积的装置和方法。 将多个基板装载到多个反应池中。 将反应池设置在与外部条件隔离的反应室中。 最终和重复地将各种纸物质施加到每个基板上，使得在每个基板上形成薄膜。 多个蒸气喷射管各自通过在每个基板上周期性地扫描来施加物质来喷射一种蒸气物质。

公开(公告)号：US6009831A

公开(公告)日：2000-01-04

申请号：US348235

申请日：1999-07-06

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

公开(公告)号：US20050000453A1

公开(公告)日：2005-01-06

申请号：US10860534

申请日：2004-06-02

申请人： Chul-Ju Hwang ,  Sang-Gon Lee

发明人： Chul-Ju Hwang ,  Sang-Gon Lee

IPC分类号： H01L21/68 ,  H01L21/00 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68764 ,  H01L21/67103 ,  H01L21/68771

摘要： An apparatus for a semiconductor device includes: a chamber; a susceptor in the chamber; a plurality of heating-blocks on the susceptor; a lift pin assembly through the susceptor; a substrate holder over the susceptor, the substrate holder having a plurality of through holes corresponding to the plurality of heating-blocks; and a shaft combined with the substrate holder-through the susceptor.

摘要翻译： 一种半导体器件的装置，包括：腔室; 室内的一个感受器; 基座上的多个加热块; 提升销组件通过基座; 在所述基座上方的基板保持器，所述基板保持具有对应于所述多个加热块的多个通孔; 以及与基板支架结合的轴穿过基座。

公开(公告)号：US06514837B2

公开(公告)日：2003-02-04

申请号：US09801518

申请日：2001-03-08

申请人： Young Suk Lee ,  Chul-Ju Hwang

发明人： Young Suk Lee ,  Chul-Ju Hwang

IPC分类号： H01L2136

CPC分类号： H01L21/02274 ,  C23C16/46 ,  C23C16/507 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/31625 ,  H01L21/76224

摘要： A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

摘要翻译： 高密度等离子体化学气相沉积装置包括：真空室，设有反应气体的入口和出口; 位于真空室内以将晶片安装在其上的可变元件，所述可动元件在其上表面具有晶片卡盘，以防止晶片水平移动; 围绕真空室的上外壁的线圈天线; 用于向线圈天线施加RF功率的RF发生器; 以及加热装置，用于加热安装在所述容器上的所述晶片。 由于晶片111由传统的HDP-CVD装置中没有提出的晶片加热单元预先加热，所以抑制了先前溅射的绝缘材料的再沉积。 因此，即使间隙具有高纵横比，也可以填补空隙。

公开(公告)号：US06565655B2

公开(公告)日：2003-05-20

申请号：US09803859

申请日：2001-03-12

申请人： Chul-Ju Hwang ,  Sung-Ryul Kim ,  Jae-Kyun Park

发明人： Chul-Ju Hwang ,  Sung-Ryul Kim ,  Jae-Kyun Park

IPC分类号： C30B2514

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/45593 ,  C30B25/14 ,  Y10T117/10

摘要： A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced. In addition, the gas outlet is installed at the portion where the reactive gas is satisfactorily cooled and condensed and the vacuum pump is connected with the gas outlet, so that the cooled and condensed contaminant generating source is quickly removed, and thus the defective proportion of the semiconductor device can be considerably reduced.

摘要翻译： 用于制造半导体器件的高真空装置包括设置有用于反应气体的入口和出口的反应室，安装在反应室中的用于将半导体安装在其上的阻塞器和与出口连接的真空泵， 所述反应室进入高真空状态，其中所述反应气体入口的气体喷射器被引导到所述半导体器件的下方，使得从所述反应气体入口喷射的反应气体的初始气体流不直接通过所述上部 的半导体衬底。 由于防止反应性气体在半导体衬底的上表面处冷却和冷凝，所以可以显着地减少半导体器件的不合格率。 此外，气体出口安装在反应气体被令人满意地冷却和冷凝的部分处，并且真空泵与气体出口连接，使得冷却和冷凝的污染物发生源被快速去除，因此，缺陷比例 可以大大减少半导体器件。

公开(公告)号：US06190460B1

公开(公告)日：2001-02-20

申请号：US09348237

申请日：1999-07-06

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

摘要翻译： 一种用于低压化学气相沉积的改进的装置，其能够实现各种厚度均匀的薄膜，防止部件断裂，实现系统的自动化，以及组合使用低压化学气相沉积装置和等离子体低压 化学气相沉积装置，其包括沉积基底; 反应器，设置在所述沉积基底上并且在其中形成有反应区域; 在反应器中升高和降低的衬底，并且放置晶片; 用于将化学源气体引入反应器的化学源气体导入器; 设置在所述基板中用于加热所述晶片的基板加热部件; 以及用于加热反应器的反应器加热构件。

公开(公告)号：US06026764A

公开(公告)日：2000-02-22

申请号：US348236

申请日：1999-07-06

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

摘要翻译： 一种用于低压化学气相沉积的改进的装置，其能够实现各种厚度均匀的薄膜，防止部件断裂，实现系统的自动化，以及组合使用低压化学气相沉积装置和等离子体低压 化学气相沉积装置，其包括沉积基底; 反应器，设置在所述沉积基底上并且在其中形成有反应区域; 在反应器中升高和降低的衬底，并且放置晶片; 用于将化学源气体引入反应器的化学源气体导入器; 设置在所述基板中用于加热所述晶片的基板加热部件; 以及用于加热反应器的反应器加热构件。

公开(公告)号：US5928427A

公开(公告)日：1999-07-27

申请号：US571404

申请日：1995-12-13

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

公开(公告)号：US5441570A

公开(公告)日：1995-08-15

申请号：US263930

申请日：1994-06-21

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4401

摘要： Apparatus for low pressure chemical vapor deposition. The LPCVD apparatus of this invention has a compound source gas flow path which is formed between the inside and outside quartz tubes of the reactor. With the path, the apparatus supplies the compound source gas from the upper section to the lower section of the reactor and lets the source gas be introduced into the deposition reacting space of the reactor while being sufficiently mixed and sufficiently heated and achieves the desired deposition result of uniform quality and thickness of chemical thin layers. The LPCVD apparatus also prevents introduction of oxygen into the reactor when washing the quartz tubes of reactor using N.sub.2 gas, thus to prevent forming of undesirable oxide on the wafers and to minimize the fraction defective of result wafers. In LPCVD apparatus of this invention, the inside and outside quartz tubes of the reactor are easily separated and assembled with respect to the apparatus housing, thus to be easily washed or substituted with new tubes and to be produced in mass production with lower cost.

摘要翻译： 低压化学气相沉积装置。 本发明的LPCVD装置具有形成在反应器的内外石英管之间的复合源气流路径。 通过该路径，该装置将复合源气体从反应器的上部向下部提供，并将源气体充分混合并充分加热并引入到反应器的沉积反应空间中并达到所需的沉积结果 均匀的质量和厚度的化学薄层。 LPCVD装置还防止在使用N 2气体洗涤反应器的石英管时将氧气引入反应器中，从而防止在晶片上形成不合需要的氧化物，并使结晶晶片缺陷部分最小化。 在本发明的LPCVD装置中，反应器的内外石英管容易相对于装置壳体分离和组装，从而易于洗涤或用新的管替代并以较低的成本批量生产。