发明授权
- 专利标题: Test structure for high precision analysis of a semiconductor
- 专利标题(中): 半导体高精度分析测试结构
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申请号: US09503838申请日: 2000-02-15
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公开(公告)号: US06872583B1公开(公告)日: 2005-03-29
- 发明人: David Donggang Wu
- 申请人: David Donggang Wu
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/24 ; H01L23/544 ; H01L21/66
摘要:
Semiconductor chip design and analysis is enhanced by using a dummy structure for analyzing a test structure in a test chip. According to an example embodiment of the present invention, a dummy structure is formed having structure that is about identical to that of test structure in a test chip. The parasitic capacitance of the dummy structure is determined and used to analyze the test structure. In this manner, the parasitic capacitance associated with the test structure can be accounted for, enhancing the ability to design, test, and debug semiconductor chips.
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