发明授权
US06872987B2 Silicon controlled rectifier ESD structures with trench isolation
有权
具有沟槽隔离功能的可控硅整流器ESD结构
- 专利标题： Silicon controlled rectifier ESD structures with trench isolation
- 专利标题（中）： 具有沟槽隔离功能的可控硅整流器ESD结构
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申请号： US10462287申请日： 2003-06-16
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公开(公告)号： US06872987B2公开(公告)日： 2005-03-29
- 发明人: Ta-Lee Yu
- 申请人： Ta-Lee Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L21/332
- IPC分类号： H01L21/332 ; H01L27/02 ; H01L29/74 ; H01L31/111
摘要：
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates polysilicon gates bridging SCR diode junction elements and also bridging between SCR elements and neighboring STI structures. The presence of the strategically located polysilicon gates effectively counters the detrimental effects of non-planar STI “pull down” regions as well as compensating for the interaction of silicide structures and the effective junction depth of diode elements bounded by STI elements. Connecting the gates to appropriate voltage sources such as the SCR anode input voltage and the SCR cathode voltage, typically ground, reduces normal operation leakage of the ESD protection device.
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