发明授权
- 专利标题： Substrate processing method and substrate processing apparatus
- 专利标题（中）： 基板处理方法和基板处理装置
-
申请号： US10300760申请日： 2002-11-21
-
公开(公告)号： US06875466B2公开(公告)日： 2005-04-05
- 发明人: Hidefumi Matsui , Junichi Kitano
- 申请人： Hidefumi Matsui , Junichi Kitano
- 申请人地址： JP Tokyo-To
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo-To
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-358183 20011122
- 主分类号： G03F7/38
- IPC分类号： G03F7/38 ; H01L21/00 ; H01L21/027 ; H01L21/677 ; B05D3/12
摘要：
The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the following exposing process, and the uniformity of the line width and the like can be improved.
公开/授权文献
信息查询
IPC分类:
