Invention Grant
- Patent Title: Method of producing diamond film and diamond film produced thereby
- Patent Title (中): 由此生产金刚石膜和金刚石膜的方法
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Application No.: US10141009Application Date: 2002-05-06
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Publication No.: US06875708B2Publication Date: 2005-04-05
- Inventor: Hitoshi Noguchi
- Applicant: Hitoshi Noguchi
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Hogan & Hartson, LLP
- Priority: JP2001-141123 20010511
- Main IPC: C30B29/04
- IPC: C30B29/04 ; C23C16/02 ; C23C16/27 ; H01L21/027 ; H01L21/205 ; H01L21/469
Abstract:
There is disclosed a method of producing a diamond film formed on a substrate, wherein at least after a film (dopant layer) containing doping elements is formed on a surface of the substrate, a vapor phase synthetic diamond film is formed on the dopant layer, and the dopant layer contains diamond particles, which become sources of diamond nuclei, in addition to doping elements, and also disclosed a diamond film produced by the method. There can be provided a method of producing a diamond film that a diamond film having lowered electric resistance can be produced, and also provided a diamond film produced by the method.
Public/Granted literature
- US20020168836A1 Method of producing diamond film and diamond film Public/Granted day:2002-11-14
Information query
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