发明授权
- 专利标题: Method for fabricating a structure for making contact with an IC device
- 专利标题(中): 制造与IC器件接触的结构的方法
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申请号: US10742685申请日: 2003-12-19
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公开(公告)号: US06880245B2公开(公告)日: 2005-04-19
- 发明人: Brian Samuel Beaman , Keith Edward Fogel , Paul Alfred Lauro , Maurice Heathcote Norcott , Da-Yuan Shih
- 申请人: Brian Samuel Beaman , Keith Edward Fogel , Paul Alfred Lauro , Maurice Heathcote Norcott , Da-Yuan Shih
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Daniel P Morris
- 主分类号: G01R1/067
- IPC分类号: G01R1/067 ; G01R1/073 ; G01R3/00 ; G01R31/28 ; H05K3/32 ; H05K3/40 ; H01R43/00
摘要:
Probes for electronic devices are described. The probe is formed by ball bonding a plurality of wires to contact locations on a fan out substrate surface. The wires are cut off leaving stubs. A patterned polymer sheet having electrical conductor patterns therein is disposed over the stubs which extend through holes in the sheet. The ends of the wires are flattened to remit the polymer sheet in place. The wire is connected to an electrical conductor on the polymer sheet which is converted to a contact pad on the polymer sheet. A second wire is ball bonded to the pad on the polymer sheet and cut to leave a second stub. The polymer sheet is laser cut so that each second stub is free to move independently of the other second studs. The ends of the second stubs are disposed against contact locations of an electronic device, such as an FC chip, to test the electronic device.
公开/授权文献
- US20040130343A1 High density cantilevered probe for electronic devices 公开/授权日:2004-07-08
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