发明授权
- 专利标题： Strained silicon NMOS devices with embedded source/drain
- 专利标题（中）： 具有嵌入式源极/漏极的应变硅NMOS器件
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申请号： US10708746申请日： 2004-03-23
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公开(公告)号： US06881635B1公开(公告)日： 2005-04-19
- 发明人: Dureseti Chidambarrao , Effendi Leobandung , Anda C. Mocuta , Haining S. Yang , Huilong Zhu
- 申请人： Dureseti Chidambarrao , Effendi Leobandung , Anda C. Mocuta , Haining S. Yang , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Todd M. C. Li
- 主分类号： C30B25/18
- IPC分类号： C30B25/18 ; C30B29/06 ; H01L21/20 ; H01L21/285 ; H01L21/336 ; H01L29/10 ; H01L29/78 ; H01L29/786 ; C30B23/00 ; H01L21/36
摘要：
A planar NFET on a strained silicon layer supported by a SiGe layer achieves reduced external resistance by removing SiGe material outside the transistor body and below the strained silicon layer and replacing the removed material with epitaxial silicon, thereby providing lower resistance for the transistor electrodes and permitting better control over Arsenic diffusion.