发明授权
US06881651B2 Methods and devices using group III nitride compound semiconductor
有权
使用III族氮化物化合物半导体的方法和装置
- 专利标题: Methods and devices using group III nitride compound semiconductor
- 专利标题(中): 使用III族氮化物化合物半导体的方法和装置
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申请号: US10382647申请日: 2003-03-07
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公开(公告)号: US06881651B2公开(公告)日: 2005-04-19
- 发明人: Norikatsu Koide , Hisaki Kato
- 申请人: Norikatsu Koide , Hisaki Kato
- 申请人地址: JP Aichi-ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi-ken
- 代理机构: McGinn & Gibb, PLLC
- 优先权: JPH11-142309 19990521
- 主分类号: C30B25/02
- IPC分类号: C30B25/02 ; C30B29/40 ; H01L21/20 ; H01L21/205 ; H01L33/16 ; H01L33/32 ; H01L33/34 ; H01S5/00 ; H01S5/323
摘要:
A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.
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