发明授权
- 专利标题： Method of forming contact plug on silicide structure
- 专利标题（中）： 在硅化物结构上形成接触塞的方法
-
申请号： US10265937申请日： 2002-10-07
-
公开(公告)号： US06884736B2公开(公告)日： 2005-04-26
- 发明人: Chii-Ming Wu , Mei-Yun Wang , Chih-Wei Chang , Chin-Hwa Hsieh , Shau-Lin Shue , Chu-Yun Fu , Ju-Wang Hsu , Ming-Huan Tsai , Yuan-Hung Chiu
- 申请人： Chii-Ming Wu , Mei-Yun Wang , Chih-Wei Chang , Chin-Hwa Hsieh , Shau-Lin Shue , Chu-Yun Fu , Ju-Wang Hsu , Ming-Huan Tsai , Yuan-Hung Chiu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/60 ; H01L21/768 ; H01L21/302
摘要：
A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
公开/授权文献
- US20040067635A1 Method of forming contact plug on silicide structure 公开/授权日：2004-04-08
信息查询
IPC分类:
