发明授权
- 专利标题： Integrated circuit including single crystal semiconductor layer on non-crystalline layer
- 专利标题（中）： 集成电路包括非晶层上的单晶半导体层
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申请号： US10638858申请日： 2003-08-09
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公开(公告)号： US06885031B2公开(公告)日： 2005-04-26
- 发明人: Theodore I. Kamins
- 申请人： Theodore I. Kamins
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： C30B1/00
- IPC分类号： C30B1/00 ; C30B7/00 ; C30B13/00 ; C30B25/02 ; C30B25/18 ; C30B29/06 ; H01L21/20 ; H01L21/205 ; H01L31/112
摘要：
A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described.
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