- 专利标题: Method for production of high purity silicon
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申请号: US10450125申请日: 2001-11-21
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公开(公告)号: US06887448B2公开(公告)日: 2005-05-03
- 发明人: Hans-Dieter Block , Leslaw Mleczko , Hans-Joachim Leimkühler , Rainer Weber , Knud Werner , Dietmar Schwanke , Johannes-Peter Schäfer , Gebhard Wagner
- 申请人: Hans-Dieter Block , Leslaw Mleczko , Hans-Joachim Leimkühler , Rainer Weber , Knud Werner , Dietmar Schwanke , Johannes-Peter Schäfer , Gebhard Wagner
- 申请人地址: DE Bonn
- 专利权人: SolarWorld AG
- 当前专利权人: SolarWorld AG
- 当前专利权人地址: DE Bonn
- 代理机构: McGlew and Tuttle, P.C.
- 优先权: DE10061682 20001211
- 国际申请: PCTEP01/13507 WO 20011121
- 国际公布: WO0248034 WO 20020620
- 主分类号: C01B33/029
- IPC分类号: C01B33/029 ; C01B33/039 ; H01L31/18 ; C01B33/02
摘要:
The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl4), hydrogen (H2) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl3) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl4 and a partial stream, essentially comprising SiHCl3, c) disproportionation of the SiHCl3-containing partial stream to give SiCl4 and SiH4, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl3 is introduced into a first reaction zone, the lower boiling SiH4-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of −25° C. to 50° C., the non-condensing SiH4-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH4 is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH4 to give high purity silicon.
公开/授权文献
- US20040047797A1 Method for production of high purity silicon 公开/授权日:2004-03-11