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15 条记录 (耗时 0.028 秒)

    Method for production of high purity silicon
    1.
    发明授权
    Method for production of high purity silicon 失效

    公开(公告)号：US06887448B2

    公开(公告)日：2005-05-03

    申请号：US10450125

    申请日：2001-11-21

    申请人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    发明人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    IPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/18 ,  C01B33/02

    CPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P20/127 ,  Y02P70/521

    摘要： The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl4), hydrogen (H2) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl3) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl4 and a partial stream, essentially comprising SiHCl3, c) disproportionation of the SiHCl3-containing partial stream to give SiCl4 and SiH4, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl3 is introduced into a first reaction zone, the lower boiling SiH4-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of −25° C. to 50° C., the non-condensing SiH4-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH4 is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH4 to give high purity silicon.

    Process for the production of organochlorosilanes
    5.
    发明授权
    Process for the production of organochlorosilanes 失效
    生产有机氯硅烷的方法

    公开(公告)号：US5015751A

    公开(公告)日：1991-05-14

    申请号：US439726

    申请日：1989-11-20

    申请人： Kurt Feldner ,  Bruno Degen ,  Gebhard Wagner ,  Manfred Schulze

    发明人： Kurt Feldner ,  Bruno Degen ,  Gebhard Wagner ,  Manfred Schulze

    IPC分类号： C07B61/00 ,  C07F7/12 ,  C07F7/16

    CPC分类号： C07F7/16

    摘要： In the production of organochlorosilanes by reaction of silicon with an alkyl- and/or arylchloride in the presence of a copper catalyst and, optionally, promoter elements, the improvement wherein the silicon has been atomized with an inert gas, has a particle size of less than about 1000 .mu.m, by weight has an Al content of about 0.05 to 0.38%, a Ca content of about 0.02 to 0.2% and an Fe content of about 0.25 to 0.55%.

    摘要翻译： 在铜催化剂和任选的促进剂元素的存在下，通过硅与烷基 - 和/或芳基氯化物的反应制备有机氯硅烷，其中硅已经用惰性气体雾化的改进具有较小的粒度 约1000μm重量％的Al含量为约0.05至0.38％，Ca含量为约0.02至0.2％，Fe含量为约0.25至0.55％。

    Process for the preparation of alkyl halogenosilanes
    8.
    发明授权
    Process for the preparation of alkyl halogenosilanes 失效
    制备烷基卤代硅烷的方法

    公开(公告)号：US5068385A

    公开(公告)日：1991-11-26

    申请号：US570089

    申请日：1990-08-20

    申请人： Bruno Degen ,  Kurt Feldner ,  Elke Licht ,  Gebhard Wagner

    发明人： Bruno Degen ,  Kurt Feldner ,  Elke Licht ,  Gebhard Wagner

    IPC分类号： B01J27/14 ,  C07B61/00 ,  C07F7/12 ,  C07F7/16

    CPC分类号： C07F7/16

    摘要： A process for the preparation of alkyl halogenosilanes comprising reacting silicon with alkyl halide in the presence of a copper catalyst and promoter substances and phosphorous and phosphorous compounds in combination with indium or indium compounds or aluminum or aluminum compounds or a mixture of aluminum or aluminum compounds and indium or indium compounds.

    摘要翻译： 一种制备烷基卤代硅烷的方法，其包括在铜催化剂和助催化剂物质存在下使硅与烷基卤反应，以及磷和磷化合物与铟或铟化合物或铝或铝化合物或铝或铝化合物的混合物以及 铟或铟化合物。

    Single-bake two-layer enamelling with electrostatic powder coating
    9.
    发明授权
    Single-bake two-layer enamelling with electrostatic powder coating 失效
    单烤双层搪瓷与静电粉末涂料

    公开(公告)号：US4265929A

    公开(公告)日：1981-05-05

    申请号：US96368

    申请日：1979-11-21

    申请人： Gebhard Wagner ,  Werner Joseph

    发明人： Gebhard Wagner ,  Werner Joseph

    IPC分类号： A01B43/00 ,  C03C8/02 ,  C03C8/04 ,  C03C8/06 ,  C23D5/04 ,  B05D1/06

    CPC分类号： C23D5/04 ,  C03C8/02 ,  C03C8/04 ,  C03C8/06 ,  C03C2207/02 ,  C03C2207/04

    摘要： In a two-layer enamelling process in which the ground coat and surface coat powders are electrostatically applied to metallic substrates and subsequently baked together, the improvement which comprises employing a ground coat powder having an electrical resistivity of about 10.sup.10 to 10.sup.14 ohm. cm and a surface coat powder having an electrical resistivity of about 10.sup.14 to 10.sup.16 ohm. cm. Advantageously the surface tension of the ground coat amounts to at least about 0.280 N/m and the surface tension of the surface coat to at most about 0.260 N/m, the difference between the surface tensions of the ground coat and surface amounts to at least about 0.050 N/m, the ground coat powder has an electrical resistivity 10.sup.12 to 10.sup.14 ohm. cm and at least about 10.sup.2 ohm. cm lower than that of the surface coat powder, the ground coat powder contains at least one of an alkaline earth metal, zinc, manganese or iron oxide in a total concentration of about 20 to 30% by weight, the zinc oxide content not exceeding about 12% by weight and the manganese oxide plus iron oxide content not exceeding about 9% by weight, about 3 to 5% by weight of finely divided iron oxide is added to the ground coat powder before adjustment of its electrical resistivity, and the ground coat powder is applied in such a quantity that, after baking, the ground coat has a layer thickness of about 0.02 to 0.03 mm.

    摘要翻译： 在其中将地面涂层和表面涂层粉末静电施加到金属基底上并随后烘烤在一起的两层搪瓷方法中，其改进包括使用电阻率为约1010至1014欧姆的底涂粉末。 cm和表面涂层粉末，其电阻率为约1014至1016欧姆。 厘米。 有利地，地面涂层的表面张力至少为约0.280N / m，表面涂层的表面张力至多为约0.260N / m，底涂层和表面的表面张力之间的差异至少等于 约0.050N / m，底涂层粉末的电阻率为1012至1014欧姆。 cm至少约102欧姆。 cm以下，底涂粉末含有总量为20〜30重量％的碱土金属，锌，锰或氧化铁中的至少一种，氧化锌含量不超过约 12重量％，氧化锰加氧化铁含量不超过约9重量％，约3-5重量％的细碎铁氧化物在调节其电阻率之前加入到底漆中，并将研磨的涂层 粉末的施加量使得在烘烤后，底涂层的层厚度为约0.02至0.03mm。