发明授权
- 专利标题: Multi-cascode transistors
- 专利标题(中): 多串联晶体管
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申请号: US10385769申请日: 2003-03-11
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公开(公告)号: US06888396B2公开(公告)日: 2005-05-03
- 发明人: Seyed-Ali Hajimiri , Scott D. Kee , Ichiri Aoki
- 申请人: Seyed-Ali Hajimiri , Scott D. Kee , Ichiri Aoki
- 代理机构: Godwin Gruber, LLP
- 代理商 Christopher Rourk
- 主分类号: H03F1/22
- IPC分类号: H03F1/22 ; H03F3/42 ; H03F3/45 ; H03K17/687
摘要:
A cascode circuit with improved withstand voltage is provided. The cascode circuit includes three or more transistors, such as MOSFET transistors. Each transistor has a control terminal, such as a gate, and two conduction terminals, such as a drain and a source. The conduction terminals are coupled in series between two output terminals, such as where the drain of each transistor is coupled to the source of another transistor. A signal input is provided to the gate for the first transistor. Two or more control voltage sources, such as DC bias voltages, are provided to the gate of the remaining transistors. The DC bias voltages are selected so as to maintain the voltage across each transistor to a level below a breakdown voltage level.
公开/授权文献
- US20040027755A1 Reconfigurable distributed active transformers 公开/授权日:2004-02-12
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