发明授权
- 专利标题: Method of manufacturing semiconductor device and apparatus for cleaning substrate
- 专利标题(中): 半导体装置的制造方法及清洗基板的装置
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申请号: US10680216申请日: 2003-10-08
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公开(公告)号: US06890391B2公开(公告)日: 2005-05-10
- 发明人: Hidemitsu Aoki , Yoshiko Kasama , Tatsuya Suzuki
- 申请人: Hidemitsu Aoki , Yoshiko Kasama , Tatsuya Suzuki
- 申请人地址: JP
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP
- 代理机构: Dickstein, Shapiro, Morin & Oshinsky, L.L.P.
- 优先权: JP2002-303629 20021017
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; B08B3/02 ; B08B3/08 ; H01L21/00 ; H01L21/02 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; B08B3/04
摘要:
The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.
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