发明授权
- 专利标题： Method of fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US10449726申请日： 2003-06-02
-
公开(公告)号： US06890831B2公开(公告)日： 2005-05-10
- 发明人: Mayumi Nakasato , Makoto Izumi , Kazuhiro Sasada , Masahiro Oda , Toru Dan
- 申请人： Mayumi Nakasato , Makoto Izumi , Kazuhiro Sasada , Masahiro Oda , Toru Dan
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-161105 20020603; JP2002-284007 20020927; JP2002-295513 20021009
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/8238
摘要：
A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.
公开/授权文献
- US20040009635A1 Method of fabricating semiconductor device 公开/授权日：2004-01-15
信息查询
IPC分类:
