发明授权
US06893920B2 Method for forming a protective buffer layer for high temperature oxide processing
有权
形成用于高温氧化物处理的保护缓冲层的方法
- 专利标题: Method for forming a protective buffer layer for high temperature oxide processing
- 专利标题(中): 形成用于高温氧化物处理的保护缓冲层的方法
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申请号: US10243791申请日: 2002-09-12
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公开(公告)号: US06893920B2公开(公告)日: 2005-05-17
- 发明人: Zhong Dong , Chuck Jang
- 申请人: Zhong Dong , Chuck Jang
- 申请人地址: TW Hsin-Chu
- 专利权人: ProMOS Technologies, Inc.
- 当前专利权人: ProMOS Technologies, Inc.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: MacPherson Kwok Chen & Heid LLP
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/314 ; H01L21/336 ; H01L29/51 ; H01L21/8247
摘要:
A thin buffer layer of SiON is formed on the top surface of the floating gate, in order to protect the polysilicon surface from attack by atomic chlorine produced during the formation of the high temperature oxide of the ONO stack. The buffer layer can also be formed on other dielectric surfaces which are otherwise subject to adverse conditions in subsequent processing, such as the nitride layer in the ONO dielectric stack.