发明授权
- 专利标题： Semiconductor device with capacitor
- 专利标题（中）： 带电容器的半导体器件
-
申请号： US10619483申请日： 2003-07-16
-
公开(公告)号： US06894396B2公开(公告)日： 2005-05-17
- 发明人: Takeshi Shioga , John David Baniecki , Kazuaki Kurihara , Yasuo Yamagishi
- 申请人： Takeshi Shioga , John David Baniecki , Kazuaki Kurihara , Yasuo Yamagishi
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2002-210176 20020718
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L21/60 ; H01L23/31 ; H01L23/50 ; H01L23/64 ; H01L25/00 ; H01L27/01 ; H05K1/02 ; H05K1/18 ; H01L23/48
摘要：
A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.
公开/授权文献
- US20040012085A1 Semiconductor device 公开/授权日：2004-01-22
信息查询
IPC分类:
