发明授权
- 专利标题： Methods of manufacturing a tunnel magnetoresistive element, thin-film magnetic head and memory element
- 专利标题（中）： 制造隧道磁阻元件，薄膜磁头和存储元件的方法
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申请号： US10425741申请日： 2003-04-30
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公开(公告)号： US06895658B2公开(公告)日： 2005-05-24
- 发明人: Koji Shimazawa , Satoru Araki
- 申请人： Koji Shimazawa , Satoru Araki
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2000-003265 20000112
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11C11/15 ; H01F10/08 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; G11B5/127 ; H04R31/00
摘要：
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises a deposition layer made of a material that is separated by etching and deposits on the sidewalls and undergoes oxidation.