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238 条记录 (耗时 0.028 秒)

    Techniques to improve switching probability and switching speed in SOT devices
    2.
    发明授权
    Techniques to improve switching probability and switching speed in SOT devices 有权

    公开(公告)号：US10115443B2

    公开(公告)日：2018-10-30

    申请号：US15458196

    申请日：2017-03-14

    申请人： National University of Singapore

    发明人： Jungbum Yoon ,  Jae Hyun Kwon ,  Hyunsoo Yang

    IPC分类号： G11C11/16 ,  H01F10/08 ,  H01L43/10 ,  H01L43/08

    摘要： In one embodiment, a desirable (e.g., substantially 100%) SOT switching probability is achieved in a SOT device by applying in-plane input current as one or more pulses having a tuned pulse width. In the case of a single pulse, pulse width may be selected as a single tuned pulse width or a range of pulse widths that avoid a specific pulse width determined to cause a switch-back response. In the case of multiple pulses, pulse width, a time interval between pulses and other factors such as intensities may be selected to prevent a switch-back response. Further, SOT switching speed may be achieved by reducing incubation delay through modification of an external magnetic field or input current density applied to the SOT device.

    Method of Engineering Single Phase Magnetoelectric Hexaferrite Films
    5.
    发明申请
    Method of Engineering Single Phase Magnetoelectric Hexaferrite Films 审中-公开

    公开(公告)号：US20170169946A1

    公开(公告)日：2017-06-15

    申请号：US15378998

    申请日：2016-12-14

    申请人： Northeastern University

    发明人： Carmine VITTORIA

    IPC分类号： H01F41/18 ,  H01F41/22 ,  C23C14/28 ,  H01F10/08

    CPC分类号： C23C14/28 ,  C23C14/08 ,  H01F10/20 ,  H01F41/205

    摘要： A method of making a ferrite thin film is provided in which a portion of the iron ions in the ferrite are substituted by ions of at least one other metal. The substituting ions occupy both tetrahedral and octahedral sites in the unit cell of the ferrite crystal. The method includes placing each of a plurality of targets, one at a time, in close proximity to a substrate in a defined sequence; ablating the target thus placed using laser pulses, thereby causing ions from the target to deposit on the substrate; repeating these steps, thereby generating a film; and annealing the film in the presence of oxygen. The plurality of targets, the sequence of their ablation, and the number of laser pulses that each target is subjected to, are selected so as to allow the substituting ions to occupy both tetrahedral and octahedral sites in the unit cell.

    Magnetic memory element, driving method for same, and nonvolatile storage device
    6.
    发明授权
    Magnetic memory element, driving method for same, and nonvolatile storage device 有权
    磁存储元件，驱动方法及非易失性存储装置

    公开(公告)号：US08709617B2

    公开(公告)日：2014-04-29

    申请号：US13001343

    申请日：2008-09-05

    申请人： Yasushi Ogimoto ,  Haruo Kawakami

    发明人： Yasushi Ogimoto ,  Haruo Kawakami

    IPC分类号： H01F10/08 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01F10/3295 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/133 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143

    摘要： In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

    摘要翻译： 根据本发明的一个方面，磁存储元件将信息记录在具有自由层，钉扎层和夹在其间的非磁性层的自旋阀结构中。 磁存储元件在自由层上还具有单独的非磁性层和具有根据温度变化的磁特性的磁性变化层。 在自旋阀结构的周边部分设置有多个切口，包括具有不同形状的一个切口。 驱动磁存储元件的方法的特征在于通过施加单极电脉冲来记录信息。

    Write head with self-align layer and a method for making the same
    8.
    发明授权
    Write head with self-align layer and a method for making the same 有权
    用自对准层写头，并制作相同的方法

    公开(公告)号：US08259413B2

    公开(公告)日：2012-09-04

    申请号：US12347058

    申请日：2008-12-31

    申请人： Christian René Bonhôte ,  Quang Le ,  Jeffrey S. Lille ,  Vladimir Nikitin ,  Aron Pentek

    发明人： Christian René Bonhôte ,  Quang Le ,  Jeffrey S. Lille ,  Vladimir Nikitin ,  Aron Pentek

    IPC分类号： G11B5/127 ,  H01L43/08 ,  H01L43/12 ,  H01F10/08

    CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A system according to one embodiment includes a write pole having an end region positioned towards an air bearing surface, a first flare point, and a second flare point positioned between the air bearing surface and the first flare point; and a shield positioned above the write pole, wherein a cross sectional area of the write pole at a point between the first and second flare points along a plane passing through the write pole and oriented about parallel to the air bearing surface is greater than a cross sectional area of the end region of the write pole along a plane oriented parallel to the plane passing through the second flare point. Additional systems and methods are also presented.

    摘要翻译： 根据一个实施例的系统包括写入极，其具有朝向空气支撑表面定位的端部区域，第一扩口点和位于空气支承表面和第一扩张点之间的第二扩张点; 以及位于所述写入极上方的屏蔽件，其中所述写入极点在所述第一和第二扩张点之间的点沿着穿过所述写入极并平行于所述空气支承表面定向的平面的横截面面积大于十字 所述写入极的端部区域沿着平行于通过所述第二扩张点的平面取向的平面的横截面积。 还介绍了其他系统和方法。

    Memory cell with radial barrier
    9.
    发明授权
    Memory cell with radial barrier 失效
    具有径向屏障的记忆体

    公开(公告)号：US08043732B2

    公开(公告)日：2011-10-25

    申请号：US12268638

    申请日：2008-11-11

    申请人： Paul E. Anderson ,  Song S. Xue

    发明人： Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11B5/39 ,  H01F10/08 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

    摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

    Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head
    10.
    发明授权
    Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head 有权
    磁换能器，薄膜磁头，磁换能器的制造方法及制造薄膜磁头的方法

    公开(公告)号：US06920022B1

    公开(公告)日：2005-07-19

    申请号：US09769760

    申请日：2001-01-26

    申请人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano ,  Takumi Uesugi

    发明人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano ,  Takumi Uesugi

    IPC分类号： G11B5/31 ,  G11B5/127 ,  G11B5/21 ,  G11B5/39 ,  H01F10/00 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01F41/18 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y25/00 ,  G11B5/1276 ,  G11B5/21 ,  H01F10/3268

    摘要： Provided are a magnetic transducer having good thermal stability, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a capping layer, which are stacked in this order on the underlayer. The ferromagnetic layer is divided into a bottom layer and a top layer in the direction of stack. A ferromagnetic interlayer having magnetism and having higher electrical resistance than the electrical resistance of the ferromagnetic layer is formed between the bottom layer and the top layer. The ferromagnetic interlayer magnetically integrates the bottom layer with the top layer and limits a path for electrons moving through the stack, thereby improving the rate of resistance change. Furthermore, the ferromagnetic interlayer contains, as an additive, at least one element in a group consisting of Mn, Cr, Ni, Cu, Rh, Ir and Pt and thus prevents heat deterioration in the stack.

    摘要翻译： 提供具有良好热稳定性的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。 MR元件的堆叠具有堆叠结构，其包括下层，第一软磁层，第二软磁层，非磁性层，铁磁层，反铁磁层和覆盖层， 底层 铁磁层沿堆叠方向分为底层和顶层。 在底层和顶层之间形成具有磁性并且具有比铁磁层的电阻更高的电阻的铁磁中间层。 铁磁层将磁极层与顶层磁集成，限制电子移动通过堆叠的路径，从而提高电阻变化率。 此外，铁磁性中间层含有由Mn，Cr，Ni，Cu，Rh，Ir和Pt组成的组中的至少一种元素作为添加剂，从而防止堆叠中的热劣化。