发明授权
US06897147B1 Solution for copper hillock induced by thermal strain with buffer zone for strain relaxation
有权
用于应变松弛的缓冲区的热应变诱导的铜小丘的解决方案
- 专利标题： Solution for copper hillock induced by thermal strain with buffer zone for strain relaxation
- 专利标题（中）： 用于应变松弛的缓冲区的热应变诱导的铜小丘的解决方案
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申请号： US10758315申请日： 2004-01-15
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公开(公告)号： US06897147B1公开(公告)日： 2005-05-24
- 发明人: Shin-Yeu Tsai , Po-Hsiung Leu , Chia-Ming Yang , Tsang-Yu Liu , Yun-Da Fan , Chen-Peng Fan
- 申请人： Shin-Yeu Tsai , Po-Hsiung Leu , Chia-Ming Yang , Tsang-Yu Liu , Yun-Da Fan , Chen-Peng Fan
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3205 ; H01L21/44 ; H01L21/768
摘要：
A method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by applying F ions to the copper layer to form a buffer zone on a surface of the copper layer and in-situ depositing a capping layer overlying the copper layer. The F ions remove copper oxide naturally formed on the copper surface and the buffer zone transfers thermal vertical strain in the copper to horizontal strain thereby preventing formation of copper hillocks.
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