发明授权
US06899858B2 Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process
失效
通过ALCVD法合成HfO2薄膜沉积硝酸铪的方法
- 专利标题： Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process
- 专利标题（中）： 通过ALCVD法合成HfO2薄膜沉积硝酸铪的方法
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申请号： US10350641申请日： 2003-01-23
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公开(公告)号： US06899858B2公开(公告)日： 2005-05-31
- 发明人: Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
- 申请人： Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理商 David C. Ripma; Matthew D. Rabdau; Joseph P. Curtin
- 主分类号： C01G27/00
- IPC分类号： C01G27/00 ; C01G27/02 ; C23C16/40 ; H01L21/316 ; C01B21/48
摘要：
A method of preparing a hafnium nitrate thin film includes placing phosphorus pentoxide in a first vessel; connecting the first vessel to a second vessel containing hafnium tetrachloride; cooling the second vessel with liquid nitrogen; dropping fuming nitric acid into the first vessel producing N2O5 gas; allowing the N2O5 gas to enter the second vessel; heating the first vessel until the reaction is substantially complete; disconnecting the two vessels; removing the second vessel from the liquid nitrogen bath; heating the second vessel; refluxing the contents of the second vessel; drying the compound in the second vessel by dynamic pumping; purifying the compound in the second vessel by sublimation to form Hf(NO3)4, and heating the Hf(NO3)4 to produce HfO2 for use in an ALCVD process.
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