Invention Grant
- Patent Title: Apparatus and method for enhanced voltage contrast analysis
- Patent Title (中): 用于增强电压对比度分析的装置和方法
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Application No.: US10327398Application Date: 2002-12-19
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Publication No.: US06900065B2Publication Date: 2005-05-31
- Inventor: Vicky Rashkovan , Dror Shemesh
- Applicant: Vicky Rashkovan , Dror Shemesh
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Main IPC: G01R31/311
- IPC: G01R31/311 ; H01L23/544 ; H01L21/66 ; G01R31/08 ; G01R31/26

Abstract:
An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.
Public/Granted literature
- US20040075458A1 Apparatus and method for enhanced voltage contrast analysis Public/Granted day:2004-04-22
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