Abstract:
A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, in which the cross section comprises at least one first portion made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are performed while the specimen is placed in a vacuum chamber.
Abstract:
A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.
Abstract:
A charged particle detector assembly comprises a particle detector, which has at least one particle sensitive region for detecting at least a portion of the spatial distribution of charged particles and for generating a two-dimensional optical signal which correlates to the detected spatial distribution. Further, an image conduit has an input coupled to the particle sensitive region of the particle detector for transmitting the two-dimensional optical signal to at least one optical detector. Further, a selecting means is adapted for selecting at least a portion of the two-dimensional optical signal.
Abstract:
A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, whereas the cross section comprises at least one first portions made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are preformed while the specimen is placed in a vacuumed chamber.
Abstract:
A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
Abstract:
A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter; and an interface to a electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.
Abstract:
The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.
Abstract:
A system and method for multi detector detection of electrons, the method includes the steps of directing a primary electron beam, through a column, to interact with an inspected object, directing, by introducing a substantial electrostatic field, electrons reflected or scattered from the inspected objects towards multiple interior detectors, whereas at least some of the directed electrons are reflected or scattered at small angle in relation to the inspected object; and receiving detection signals from at least one interior detector.
Abstract:
A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes a stage for supporting an object that comprises an opaque layer positioned above an intermediate layer; a controller, adapted to receive or define an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illumination optics adapted to illuminate the object with a primary electron beam; an electron spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor, coupled to the spectrometer, adapted to generate images from detection signals provided by the spectrometer.
Abstract:
A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.