Invention Grant
- Patent Title: Substrate and method for producing the same, and thin film structure
- Patent Title (中): 基板及其制造方法及薄膜结构
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Application No.: US10381046Application Date: 2001-07-26
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Publication No.: US06900071B2Publication Date: 2005-05-31
- Inventor: Mika Okumura , Makio Horikawa , Kiyoshi Ishibashi
- Applicant: Mika Okumura , Makio Horikawa , Kiyoshi Ishibashi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- International Application: PCT/JP01/06470 WO 20010726
- International Announcement: WO03/01285 WO 20030213
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G01P15/08 ; G01P15/125 ; H01L21/316 ; H01L29/84 ; H01L21/00
Abstract:
A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO2 film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS.
Public/Granted literature
- US20040021186A1 Substrate and method for producing the same, and thin film structure Public/Granted day:2004-02-05
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