发明授权
- 专利标题： Separating apparatus, separating method, and method of manufacturing semiconductor substrate
- 专利标题（中）： 分离装置，分离方法和制造半导体衬底的方法
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申请号： US10602922申请日： 2003-06-25
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公开(公告)号： US06900114B2公开(公告)日： 2005-05-31
- 发明人: Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
- 申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Morgan & Finnegan, LLP
- 优先权： JP11-025482 19990202
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/00 ; H01L21/02 ; H01L21/762 ; H01L21/763 ; H01L21/30 ; H01L21/46
摘要：
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
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