发明授权
- 专利标题： Method and structure for a high voltage junction field effect transistor
- 专利标题（中）： 高压结场效应晶体管的方法和结构
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申请号： US10117019申请日： 2002-04-04
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公开(公告)号： US06900506B1公开(公告)日： 2005-05-31
- 发明人: Ho-Yuan Yu , Eric Johnson
- 申请人： Ho-Yuan Yu , Eric Johnson
- 申请人地址： US CA Santa Clara
- 专利权人： LovolTech, Inc.
- 当前专利权人： LovolTech, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Wagner, Murabito & Hao LLP
- 主分类号： H01L21/337
- IPC分类号： H01L21/337 ; H01L21/338 ; H01L29/06 ; H01L29/808 ; H01L29/812 ; H01L29/76
摘要：
A method for fabricating a junction field transistor for high-voltage applications. A lightly doped first epitaxial layer is formed on a highly doped substrate. A second epitaxial layer is deposited with a heavier dopant concentration than the first epitaxial layer. The second layer contains a control structure having a plurality of implanted gate regions and a source. A guard ring is formed to isolate the source and the control structure. The combination of the lightly doped first epitaxial layer and the guard ring enable the JFET to be operated with a breakdown voltage in excess of 100 volts. Multiple guard rings may be used to provide a breakdown voltage in excess of 150 volts.
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