发明授权
- 专利标题： Method of manufacturing a semiconductor device using a wet process
- 专利标题（中）： 使用湿法制造半导体器件的方法
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申请号： US10384565申请日： 2003-03-11
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公开(公告)号： US06903015B2公开(公告)日： 2005-06-07
- 发明人: Yoshitaka Matsui , Masako Kodera
- 申请人： Yoshitaka Matsui , Masako Kodera
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-067501 20020312
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/311 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/44
摘要：
A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
公开/授权文献
- US20030186544A1 Method of manufacturing a semiconductor device 公开/授权日：2003-10-02
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